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Comptes Rendus Physique
Volume 14, n° 2-3
pages 141-148 (février 2013)
Doi : 10.1016/j.crhy.2012.12.001
Twinning occurrence and grain competition in multi-crystalline silicon during solidification
Maclage et compétition de grains dans le silicium multi-cristallin durant la solidification
 

Amina Tandjaoui a, b, , Nathalie Mangelinck-Noel a, b, Guillaume Reinhart a, b, Bernard Billia a, b, Xavier Guichard c
a Aix-Marseille Université, campus Saint-Jérôme, case 142, 13397 Marseille cedex 20, France 
b CNRS, IM2NP, UMR CNRS 7334, campus Saint-Jérôme, case 142, 13397 Marseille cedex 20, France 
c ESRF, polygone scientifique Louis-Néel, BP220, 38043 Grenoble cedex, France 

Corresponding author at: Aix-Marseille Université, campus Saint-Jérôme, case 142, 13397 Marseille cedex 20, France.
Abstract

Multi-crystalline silicon solidification is investigated by performing directional solidification experiments. Twinning phenomenon has been identified and observed in situ and in real time during the solidification using X-ray synchrotron imaging techniques: radiography and topography. The radiography observations give information on the formation, birth localized at the interface and evolution of the twins during solidification. The topography results give further information on the grain arrangement and on new grains in twinned position and grain growth competition. We have evidenced two twinning mechanisms: the first is the multiple twin formations during the growth of one grain. The second is the nucleation of a grain in twinned position at the bottom of a grain boundary groove.

The full text of this article is available in PDF format.
Résumé

La solidification du silicium multi-cristallin a été étudiée en menant à bien des expériences de solidification dirigée. Le phénomène de maclage a été identifié et observé in situ et en temps réel pendant la solidification, en utilisant des techniques dʼimagerie X synchrotron : radiographie et topographie. Les observations par radiographie donnent des informations concernant la formation, la localisation à lʼinterface et lʼévolution des macles au cours de la solidification. Les résultats de topographie donnent des informations complémentaires sur lʼarrangement des grains et sur la compétition de croissance des macles et des grains. Nous avons montré lʼexistence de deux mécanismes de maclage : la formation de macles multiples pendant la croissance dʼun grain et la germination dʼune macle unique dans le sillon dʼun joint de grains.

The full text of this article is available in PDF format.

Keywords : Silicon, Solidification, X-ray radiography, Synchrotron, Twins, Grain competition

Mots-clés : Silicium, Solidification, Radiographie X, Synchrotron, Macles, Compétition de grains




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