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Comptes Rendus Physique
Volume 7, n° 8
pages 924-930 (octobre 2006)
Doi : 10.1016/j.crhy.2006.10.010
Photosensitive resists for optical lithography
Résines photosensibles pour la lithographie optique
 

Bénédicte Mortini
STMicroelectronics, 850, rue Jean-Monnet, 38920 Crolles, France 

Abstract

Optical lithography relies on photosensitive materials to transfer the aerial image into the substrate. These photoresists have been steadily improved to keep up with the innovations in the lithography tools targeting a higher fidelity in the pattern transfer. After describing the resist process and the photolithographic criteria for such materials, this article will focus on the Chemically Amplified Resists (CAR) especially for the 193 nm lithography. The added challenges of the immersion lithography will then be addressed and some perspectives will be given. To cite this article: B. Mortini, C. R. Physique 7 (2006).

The full text of this article is available in PDF format.
Résumé

La lithographie optique utilise des matériaux photosensibles pour transférer lʼimage aérienne dans le substrat. Ces photorésines nʼont cessé dʼêtre améliorées pour suivre les innovations des outils de lithographie visant un transfert de motif de meilleure qualité. Après une description du procédé résine et des critères photolithographiques de tels matériaux, cet article se focalisera sur les résines à amplification chimique en particulier pour la lithographie 193 nm. Il traitera ensuite des défis additionnels de la lithographie en immersion avant de donner des perspectives. Pour citer cet article : B. Mortini, C. R. Physique 7 (2006).

The full text of this article is available in PDF format.

Keywords : Chemically Amplified Resist, Post-exposure bake, Immersion lithography

Mots-clés : Résine à amplification chimique, Recuit post-exposition, Lithographie en immersion




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