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Comptes Rendus Chimie
Volume 8, n° 8
pages 1249-1255 (août 2005)
Doi : 10.1016/j.crci.2004.11.030
Received : 30 June 2004 ;  accepted : 10 November 2004
Micro- and nanopatterns of polythiophene covalently bound to silicon

Bruno Fabre a, , Danial D.M. Wayner b
a Laboratoire d'électrochimie moléculaire et macromoléculaire, synthèse et électrosynthèse organiques (UMR CNRS no 6510), université Rennes-1, 35042 Rennes cedex, France 
b Steacie Institute for Molecular Sciences, National Research Council, Ottawa, Ont., Canada 

*Corresponding author.

Micro- and nanopatterns of polythiophene covalently bound to Si(111) have been generated from the photoelectrochemical oxidation of silicon surfaces patterned with thiophene-terminated decyl and decyl monolayers in the presence of thiophene. The procedure used for the attachment of these organic monolayers on silicon involved either UV photolithography or a highly diluted mixture of precursor alkenes. To cite this article: B. Fabre and D.D.M. Wayner, C. R. Chimie 8 (2005) .

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Des motifs micro- et nanométriques de polythiophène liés de façon covalente à Si(111) ont été préparés par oxydation photoélectrochimique en présence de thiophène de surfaces de silicium modifié par des monocouches alkyles terminées par des groupements méthyls et thiényls. La stratégie utilisée pour le greffage de ces monocouches organiques mettait en oeuvre, soit un procédé photolithographique UV, soit un mélange extrêmement dilué des alcènes précurseurs. Pour citer cet article : B. Fabre et D.D.M. Wayner, C. R. Chimie 8 (2005) .

The full text of this article is available in PDF format.

Keywords : Silicon, Monolayer, Polythiophene, Patterning, Photoelectrochemistry

Mots clés : Silicium, Monocouche, Polythiophène, Structuration, Photoélectrochimie

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